Journal of Physics: Conference Series OPEN ACCESS Related

micromachining of silicon using an Sulfr hexafluoride/O2 inductively coupled plasma F Jiang, A Keating, M Martyniuk et al.-Low-pressure nonequilibrium plasma for a top-down nanoprocess Toshiaki Makabe and Takashi Yagisawa-Recent citations Electron collision cross sections of CHF 3 and electron transport in CHF 3 and CHF 3 Ar mixtures Satoru Kawaguchi et al-Get price

Basic Configuration of G6 Devices - MICROSENS

Application Note Basic Configuration of G6 Devices MICROSENS GmbH Co. KG Kueferstr. 16 59067 Hamm/Germany Tel. +49 2381 9452-0 FAX +49 2381 9452-100Get price

MICROSENS - 6-Port GbE Micro Switch G6 PoE+

With the current 6th generation of Micro Switches (according to IEEE 802.3az Energy Efficient Ethernet) MICROSENS continues to use the unique device form of the installation switch, which has been available since 1995.Get price

Excitation of Ar, O2, and gaz sf6/O2 plasma discharges using

Jul 13, 2018 · Pateau A, Rhallabi A, Fernandez M-C, Boufnichel M and Roqueta F 2014 Modeling of inductively coupled plasma sf 6/O2/Ar plasma discharge: effect of O2 on the plasma kinetic properties J. Vac. Sci. Technol. A 32 021303. Crossref Google ScholarGet price

Low temperature etching of Si in high density plasma using sf6 gas/O2

Feb 01, 1995 · ELSEVIER Microelectronic Engineering 27 (1995) 453-456 MICROELECTRONIC ENGINEERING Low temperature etching of Si in high density plasma using sf 6/O2 Johann W. Barthaa, Johann Greschnera, M. Puechb and P. Maquinb aIBM German Manufacturing Technology Center, P.O. Box 266, D-71044 Sindelfingen, Germany bALCATEL CIT, 98, avenue de Brogny-BP, F-74009 Annecy, France Low temperature etching of SiGet price

gaz sf6 valves couplings – Synergy Power Systems

When using the DILO coupling system a leak rate of better than 1 x 10-8 mbar l/sec. is achieved corresponding to less than 1 cm³ in 3 years. The DILO seal principle prevents the loss of sf 6 gas and moisture from penetrating the sf6 gas gas system. DILO couplings will eliminate the loss of Sulfr hexafluoride gas by incorrect gas handling.Get price

Universal insulating gas Fittings Kit 2GNM110142.a

SF 6 circuit breaker fittings kit Universal high voltage SF 6 fittings kit ABB is proud to offer to you our Universal Fittings and Regulator Kits. Each is stored in a fitted case for ease of handling,Get price

SF 6 Insulated Switching Solutions

CATALOG sf 6-PS10 September, 2010 Padmount Style SF 6Insulated Switching Solutions Providing load and fault interrupting switching for systems rated through 38kV, 900A continuous, to 25kA symmetrical interruptingGet price

Oxygen Gas Detection, Oxygen (O2) Detectors supplied by

Oxygen (O2) is a colourless gas that makes up 21 percent of Earthatmosphere. It is one of the life-sustaining elements on Earth and also the most reactive of the non-metallic elements. Oxygen forms compounds by reaction with practically any other element, as well as by reactions that displace elements from their combinations with each other.Get price

GAS COMPATIBILITY TECHNICAL INFORMATION

140 ADVANCED Specialty Gas Equipment TECHNICAL INFORMATION GAS COMPATIBILITY The compatibility data* shown on the following pages has been compiled to assist in evaluating the appropriate materials to use in handling various gases.Get price

The structural and optical properties of black silicon by

Nov 03, 2014 · Black Silicon nanostructures are fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) in a gas mixture of sf 6 and O2 at non-cryogenic temperatures. The structure evolution and th...Get price

Laboratory and Medical Gas Detection - Noventis

Solutions for Gas Detection within the Laboratory and Medical industry. Explosive atmospheres and gas alarm for laboratories. Oxygen Depletion which could be related to a Carbon Dioxide Leak DetectionGet price

Characteristics of dual-frequency capacitively coupled SF 6

Request PDF | Characteristics of dual-frequency capacitively coupled SF 6 /O 2 plasma and plasma texturing of multi-crystalline silicon | Due to it being environmentally friendly, much attentionGet price

(PDF) Experimental investigation of SF 6 –O 2 plasma for

This study examines the impact of varying the internal process parameters, such as the concentrations of oxygen and fluorine in a Sulfr hexafluoride–O2 plasma, in two capacitively coupled plasma etch chambersGet price

Decomposing Mechanism of insulating gas under Positive DC Partial

The most abundant, long-lived stable gaseous species generated by corona discharges in Sulfr hexafluoride gas contg. trace levels of O2 and H2O are the oxyfluorides SOF2, SO2F2, and SOF4. Abs. energy and charge rates-of-prodn. of these and the minor products SO2, OCS, and CO2 were measured at different total gas pressures of 100-300 kPa and for discharges ofGet price

Byproducts of Sulfur Hexafluoride (gaz sf6) Use in the Electric

Byproducts of Sulfur Hexafluoride (SF 6) Use in the Electric Power Industry Prepared for U.S. Environmental Protection Agency Office of Air and RadiationGet price

Fundamental Studies of In Situ Plasma Chamber Cleaning

The plasma etching of SiO2 and Si3N4 in C2F6-O2 and C3F8-O2 mixtures has been studied as a function of feed gas composition (SiO2 substrates), pressure (Si3N4 substrates), and power (SiO2 substrates) in a modified commercial RIE chamber. The chamber has been modified to permit in situ electrical measurements, which allows us to correlate the substrate etch rates and power coupling efficienciesGet price

VALIDATION METHODS OF insulating gas ALTERNATIVE GAS

alternative to Sulfr hexafluoride with similar or better performances on the whole range of electrical fields and temperature of use. Figure 2: BIL dielectric withstand of different gases with gas mixture corresponding to -15°C conditions Another interesting candidate is Fluoronitrile [1], it has higher dielectric properties than Sulfr hexafluoride for MV use at 1.3Get price

Myth About Sulfr hexafluoride Gas In Electrical Equipment

Apr 12, 2021 · This is just the UK, sf6 gas stays in the atmosphere for a minimum 1000 years where as CO2 100 years. Sulfr hexafluoride is on the increase the US expect a 6.2% increase over the next 6 years. sf 6 might not damage the Ozone but it will accelerate Global Warming given the fact that it stays in the atmosphere longer can cause more damage over a longer period of time.Get price

CiteSeerX — Efficient Coupling of Monte Carlo and Level Set

The result is an algorithm with an overall complexity and storage requirement scaling like O(N logN) with surface disretization. The calculation of particle trajectories is highly optimized, since spatial partitioning is used to accelerate ray tracing. The method is demonstrated on Si etching in gaz sf6/O2 plasma. 1Get price

Film models for multicomponent mass transfer: Diffusion in

Jan 01, 1982 · Tai and Chang (1979) considered in detail the case of osmotic diffusion of oxygen in the three physiological gas mixtures He-N2-O2, He-sf 6-O2 and N2- 5F6-O2. The physical properties and boundary conditions used in their study and in the present comparison are summarized in Table II. 4. Results and Discussion. Molar fluxes of He, N2 and gaz sf6.Get price

Products – Helyssen

Additionally helicon waves can be very efficiently excited by Helyssen’s antenna. Very high electron densities have been measured (typ. 10 13 cm-3) in the pressure range as high as 10-1 mbar and even using high electronegative gases (Sulfr hexafluoride, O2,…) flow rates.Get price

JP2007103876A - Etching method and etching apparatus - Google

A total gas mixed with a mixed gas composed of Sulfr hexafluoride and O2 or a mixed gas composed of sf6 gas, O2 and SiF4 with respect to a silicon substrate or a silicon substrate including a silicon oxide dielectric layer.Get price

CN104671193A - 深硅刻蚀方法 - Google Patents

本发明提供了一种深硅刻蚀方法,包括如下步骤:首先将涂有光刻胶的硅晶片放入刻蚀设备的腔室中,采用Bosh刻蚀工艺,获得具有陡直深沟槽形貌的硅晶片;然后去除硅晶片表面剩余的光刻胶;最后在所述刻蚀设备的腔室中对硅晶片进行顶部开口刻蚀,获得具有V型顶部形貌的硅晶片。Get price

STS AOE ICP Pro

C4F8, sf 6, O2, H2, CF4, two open gas slots; Process Pressure. 2-80mT; Substrate size. small pieces - one 150mm wafer; Temperatures. Platen -20°C to 120°C, Walls 100°C, Lid 120°C; Vendor Specified Capabilities. 2.5µm isolated trenches on 8-10µm TEOSGet price

Processes | Utah Nanofab

Allwin 610 RTP/RTA with O2, N2, Ar, H2 forming gas, 200-1250C; ETCH RIE and DRIE. STS Aspect ICP DRIE: time-multiplex Si etch (anti-footing) Oxford Plasmalab 100+ ICP time-multiplex cryo DRIE sf6 gas, CF4, CHF3, O2, Ar, Cl2, HBr, N2; Oxford Plasmalab 80+ multipurpose (Sulfr hexafluoride, CF4, O2, Ar) Technics PEII H2O, O2 descum resist stripGet price

Sulfr hexafluoride Gas - Al-Amin Enterprises

sf 6 is a greenhouse gas. Using transfer equipment for this gas will allow you to filter impurities and to dry the gas passing through the dehydrator. Handling gaz sf6 is a liquefied gas. Handling should be done by operators qualified, trained and certified to risks related to the use of the gas under pressure and to wear individual protectionGet price

[PDF] Cryogenic etching of silicon with sf6 gas/O2/SiF4 plasmas

Cyrogenic etching of silicon is envisaged to enable better control over plasma processing in microelectronics and to limit plasma induced damage for features beyond the 14 nm technology node. We here present results of plasma modelling for a sf 6/O2/SiF4 plasma and of molecular dynamics (MD) simulations for predicting surface interactions, together with results of etch experiments for validation.Get price

Xuezhi Ma - Postdoctoral Researcher - Texas AM - LinkedIn

The surface roughness of the Ge after RIE can be sufficiently reduced by introducing Sulfr hexafluoride-O2 etching steps into the CF4-O2 etching process, while maintaining a relatively large ratio of verticalGet price