A Kinetic Model for Plasma Etching Silicon in a insulating gas/O2 RF

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(PDF) Experimental investigation of SF 6 –O 2 plasma for

The dependence of electron density and atomic fluorine on the percentage of oxygen in an insulating gas/O2 discharge was measured using these methods. An RIE Oxford Instruments 80 plus chamber was used forGet price

Plasma etching of Si and SiO2 in Sulfr hexafluoride–O2 mixtures: Journal of

Jun 04, 1998 · The products of reaction and etch rates of Si and SiO2 in gaz sf6‐O2 plasmas have been studied as a function of feed composition in an alumina tube reactor at 27 mHz, 45 W, and 1 Torr. There is a broad...Get price

Processing of inertial sensors using insulating gas-O2 Cryogenic plasma

/ Processing of inertial sensors using sf 6-O2 Cryogenic plasma process. SAFE 2003 Semiconductor advances for future electronics. editor / s.n. Utrecht : Stichting voor de Technische Wetenschappen, 2003. pp. 683-686Get price

SimulationsofSiandSiO EtchinginSF +O Plasma

SimulationsofSiandSiO2 EtchinginSulfr hexafluoride+O2 Plasma 481 with SF5 radicals (Eq. (1.3)). At 27% O2, the concen- tration of F atoms approaches the maximum value. At this point, almost all SF5 radicals in insulating gas + O2 plasmaGet price

High-aspect-ratio deep Si etching in Sulfr hexafluoride/O2 plasma. II

Jul 28, 2010 · In this article, the authors focus on the profiles formed by high-aspect-ratio deep Si etching with insulating gas/O2 plasma mixtures. One of the most serious problems for deep Si etching processes is lateral...Get price

Passivation mechanisms in cryogenic sf6 gas/O2 etching process

Oct 15, 2003 · Passivation mechanisms of Si trenches involved in SF 6 /O 2 cryogenic plasma etching were investigated in order to better control the process and avoid defects. Trench sidewalls and profiles were ex situ characterized geometrically by SEM and chemically by spatially resolved XPS experiments.Get price

Simulations of Si and SiO2 etching in gaz sf6 + O2 plasma

We have studied the effects of pressure, rf-bias voltage, and sf 6-to-O2 gas ratio on the etch rate, selectivity, and feature profile using Si wafers patterned with 0.35-0.5 mum diameter holes in aGet price

(PDF) In situ x-ray photoelectron spectroscopy analysis of

In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a gaz sf6/O2 cryoetching process February 2009 Applied Physics Letters 94(7):071501-071501-3Get price

Mechanism of Formation of SF Decomposition Gas Products and

The sf 6 reactor tank (A), closed (B) and opened pole tank (C) with molecular sieves and lit of the pole tank (D). The optical image of insulator surface containg molecular sieves after the operating the pole tank is shown in Fig. 1. The sf6 gas reaction tank, the closed reaction pole tank with molecular sieves, theGet price

New IR sf6 gas Gas Detection Capability - International Gas Detectors

New gaz sf6 Gas Detection Solutions. Our new line of IR SF 6 gas leak detectors, provides a unique solution for continuous SF 6 monitoring. The detector uses ground-breaking NDIR sensors coupled with our industry-leading addressable communication technology.Get price

(PDF) Plasma etching of Si and SiO2 in Sulfr hexafluoride–O2 mixtures

The behaviour of gaz sf6 in quartz and alumina tubes of a flow reactor capacitively coupled to a 35 MHz radiofrequency generator has been investigated at pressure of 20 torr, with power levels of 3.5Get price

Processand Reliabilityof Sulfr hexafluoride/O2 PlasmaEtched Copper TSVs

Processand Reliabilityof sf6 gas/O2 PlasmaEtched Copper TSVs Lado Filipovic, Roberto Lacerda de Orio, and Siegfried Selberherr Institute for Microelectronics, Technische Universität Wien, Gußhausstraße 27-29/E360, A-1040 Wien, AustriaGet price

(PDF) Oxidation threshold in silicon etching at cryogenic

In silicon etching in Sulfr hexafluoride/O2 plasmas, an oxidation threshold appears when the oxygen content is large enough. A SiOxFy passivation layer is formed under such conditions.Get price

Tracking Down the Greenhouse Gas Sulfr hexafluoride with Infrared Thermography

sf 6 Gas Detection 0.4 0.7 1 µm 2 µm 5 µm 10 µm 13 µm SW MW LW The Electromagnetic Spectrum Infrared energy is part of the electromagnetic spectrum and behaves similarly to visible light.Get price

EU Regulation on Certain Fluorinated Greenhouse Gases The

EU Regulation on Certain Fluorinated Greenhouse Gases The Case of sf 6 -Latest Developments Keywords: EU Regulation on Certain Fluorinated Greenhouse Gases The Case of sf 6 -Latest Developments Peter Horrocks European Commission (DG Environment) sf6 gas Conference: Scottsdale, Az USA 1-3 December 2004 Created Date: 12/22/2004 10:23:32 AMGet price

Journal of Physics: Conference Series OPEN ACCESS Related

micromachining of silicon using an sf 6/O2 inductively coupled plasma F Jiang, A Keating, M Martyniuk et al.-Low-pressure nonequilibrium plasma for a top-down nanoprocess Toshiaki Makabe and Takashi Yagisawa-Recent citations Electron collision cross sections of CHF 3 and electron transport in CHF 3 and CHF 3 Ar mixtures Satoru Kawaguchi et al-Get price

Determination of gaz sf6 reactive ion etching end point of the

Plasma impedance monitoring is successfully used to determine the end point of reactive ion etching of a SiO 2 layer lying on a Si substrate in SF 6 plasma. The usefulness of this technique is demonstrated using a commercial Plasma Impedance Monitoring (PIM) system.Get price

In situ x-ray photoelectron spectroscopy analysis of SiOxFy

In situ x-ray photoelectron spectroscopy analysis of SiO xF y passivation layer obtained in a SF 6/O 2 cryoetching process J. Pereira,1 L. E. Pichon,1,2 R. Dussart,1,a C. Cardinaud,3 C. Y. Duluard,1Get price

Byproducts of Sulfur Hexafluoride (Sulfr hexafluoride) Use in the Electric

Byproducts of Sulfur Hexafluoride (SF 6) Use in the Electric Power Industry Prepared for U.S. Environmental Protection Agency Office of Air and RadiationGet price

Solvay Special Chemicals

Solvay Special Chemicals Sulphur Hexafluoride 5 insulating gas – a gas with unusual properties Solvay‘s sulphur hexafluoride is a non- toxic, inert, insulating and cooling gas ofGet price

World leaders in Sulfr hexafluoride Analysis and Handling Products

The sf 6 units can be selected as either ppm and gm/year. 8. 9 Gases Measured and Options Gas Range Repeatability insulating gas Purity 0-100% +/-0.5% FS1Get price

PAPER OPEN ACCESS Anisotropic plasma etching of Silicon in

Content from this work may be used under the terms of the CreativeCommonsAttribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.Get price

Study of the roughness in a photoresist masked, isotropic

Study of the Roughness in a Photoresist Masked, Isotropic, SF 6-Based ICP Silicon Etch Kristian P. Larsen,a Dirch Hjorth Petersen,a and Ole Hansena,b,z aMIC - Department of Micro and Nanotechnology, NanoDTU, and bDanish National ResearchGet price

Investigation of inductively coupled Sulfr hexafluoride plasma etching of Si

Investigation of inductively coupled sf6 gas plasma etching of Si and SiO2 throught a global model coupled with langmuir adsorption kinetics Abstract: Summary form only given. Sulfur hexafluoride (SF 6 ) plasmas are commonly used in the deep etching of silicon (Si), silicon oxide (SiO 2 ) and more recently silica glass [1].Get price

VALIDATION METHODS OF Sulfr hexafluoride ALTERNATIVE GAS

alternative to sf 6 with similar or better performances on the whole range of electrical fields and temperature of use. Figure 2: BIL dielectric withstand of different gases with gas mixture corresponding to -15°C conditions Another interesting candidate is Fluoronitrile [1], it has higher dielectric properties than gaz sf6 for MV use at 1.3Get price

Sulfur hexafluoride - Wikipedia

Sulfur hexafluoride (SF 6) or sulphur hexafluoride (British spelling), is an extremely potent and persistent greenhouse gas that is primarily utilized as an electrical insulator and arc suppressant.Get price

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Modification of Si(100)-Surfaces by Sulfr hexafluoride Plasma Etching

808 M. REICHE et al.: Modification of Si(100)-Surfaces such as SF 6, CF 4, or CHF 3 and their mixtures with O 2, N 2, or H 2 are widely applied. All these gases are characterized by a different selectivity of etching silicon or SiOGet price